Single transistor type magnetic random access memory device...

Details Single transistor type magnetic random access memory device... Single transistor type magnetic random access memory device...

2006-01-31

2006-01-31

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000, C365S171000, C365S225500, C365S066000

Reexamination Certificate

active

06992923

ABSTRACT:
A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

REFERENCES:
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6201259 (2001-03-01), Sato et al.
patent: 6314020 (2001-11-01), Hansen et al.
patent: 6359805 (2002-03-01), Hidaka
patent: 6560135 (2003-05-01), Matsuoka et al.
patent: 6778428 (2004-08-01), Joo
patent: 11-266043 (1999-09-01), None

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