Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1996-02-15
1997-08-05
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430315, 430329, 430330, 430 3, G03F 726
Patent
active
056541287
ABSTRACT:
A single resist layer lift-off process for forming patterned layers on a substrate, wherein a post-soak bake is used to control the extent to which chlorobenzene penetrates the resist layer. A post-metallization bake can also be employed to improve lift-off of the resist layer. The process of the present invention provides the resist profile with increased overhang length and the sidewalls of the resist profile with a negative slope. Such increased overhang length and negative slope prevent metallization of the sidewalls of the resist, and thus facilitate more rapid removal of the resist during lift-off.
REFERENCES:
patent: 4119483 (1978-10-01), Hubsch et al.
patent: 4212935 (1980-07-01), Canavello
patent: 4814258 (1989-03-01), Tam
patent: 4871651 (1989-10-01), McCune
IBM Technical Disclosure Bulletin, vol. 24, No. 4, Sep 1981, N.Y., pp. 2151-2152, Anonymous "Enhanced Single Layer Lift Off Process, Sep. 1981".
D.J. Elliott "Integrated Circuit Fabrication", McGraw-Hill, N.Y., pp. 291-295.
"Single-Step Optical Lift-Off Process", M. Hatzakis et al., IBM J. Res. Develop., vol. 24, No. 4, Jul. 1980, pp. 452-460.
"The Mechanism of Single-Step Lift off with Chlorobenzene in a Diazo-Type Resist", R.M. Halverson et al., IBM J. Res. Develop., vol. 26, No. 5, Sep. 1982, pp. 590-595.
"Process Control of the Chlorobenzene Single-Step Liftoff Process with a Diazo-Type Resist", George G. Collins et al., IBM J. Res. Develop., vol. 26, No. 5. Sep. 1982, pp. 596-604.
"Lift-Off Techniques for Fine Line Metal Patterning", J.M. Frary et al., Semiconductor International, Dec. 1981, pp. 72-88.
"Single-Step, Positive-Tone, Lift-Off Process Using AZ 5214-E Resist", D.R. Dunbobbin et al., SPIE, vol. 922, Optical/Laser Microlithography (1988), pp. 247-254.
"New Trilevel and Bilevel Resist Systems Using Silyl Ethers of Novolak and Low Molecular Weight Resist", Ryuji Kawazu et al., J. Vac. Sci. Technol., B 4(1), Jan./Feb. 1986, pp. 409-413.
"Electron Resists for Microcircuit and Mask Production", M. Hatzakis, J. Electrochem, Soc.: Electrochemical Technology, vol. 116, No. 7, Jul. 1969, pp. 1033-1037.
"The Mechanism of Overhang Formation in Diazide/Novolak Photoresist Film by Chlorobenzene Soak Process", Yoshiaki Mimura, J. Vac Sci. Technol., B 4(1), Jan./Feb. 1986, pp. 15-21.
"PMMA Copolymers as High Sensitivity Electron Resists", M. Hatzakis, J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979, pp. 1984-1988.
Duda Kathleen
NGK Insulators Ltd.
LandOfFree
Single resist layer lift-off process for forming patterned layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single resist layer lift-off process for forming patterned layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single resist layer lift-off process for forming patterned layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1073860