Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-16
2007-01-16
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S592000, C257SE29183, C438S202000
Reexamination Certificate
active
11191788
ABSTRACT:
A method of forming a bipolar transistor device, and more particularly a vertical poly-emitter PNP transistor, as part of a BiCMOS type manufacturing process is disclosed. The formation of the PNP transistor during a CMOS/DMOS fabrication process requires merely one additional mask to facilitate formation of a very small emitter in a portion of an N-type surface layer of a double diffused well (DWELL). Unlike conventional PNP transistors, a separate mask is not required to establish the base of the transistor as the transistor base is formed from a portion of the double diffused well and the DWELL includes a P-type body layer formed via implantation through the same opening in the same mask utilized to establish the N-type surface layer of the double diffused well. The base is also thin thus improving the transistor's frequency and gain.
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Brady III W. James
Fulk Steven J.
Garner Jacqueline J.
Smith Bradley K.
Telecky , Jr. Frederick J.
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