Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-22
2007-05-22
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S138000, C438S272000, C438S526000, C257SE21629
Reexamination Certificate
active
11115791
ABSTRACT:
The invention relates to a vertical-type single-pole component, comprising regions with a first type of conductivity which are embedded in a thick layer with a second type of conductivity. Said regions are distributed over at least one same horizontal level and are independent of each other. The regions also underlie an insulating material.
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Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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