Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-03-01
2011-03-01
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S170000, C257S199000, C257S484000, C257S603000, C257SE31058
Reexamination Certificate
active
07898001
ABSTRACT:
A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
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Charbon Edoardo
Gersbach Marek
Grant Lindsay
Henderson Robert
Niclass Cristiano
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Ecole Polytechnique Federale de Lausanne
Jorgenson Lisa K.
Louie Wai-Sing
STMicroelectronics (Research & Development ) Limited
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