Single pass compensation for electron beam proximity effect

Details Single pass compensation for electron beam proximity effect Single pass compensation for electron beam proximity effect

1992-04-06

1993-10-19

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 30, G03C 500

Patent

active

052544389

ABSTRACT:
A method for compensation for the proximity effect in electron beam lithography on an e-beam resist material. The exposed surface of the resist material is subdivided into non-overlapping pixels of approximately equal area, with a first set of pixels representing a selected pattern for e-beam lithography and a second set of pixels including all other pixels. The cumulative exposure for each pixel in the first set is computed by adding to the direct beam exposure of that pixel the contributions of spillover (backscattering) exposure arising from exposure of nearby pixels in the second set. The cumulative exposure for each pixel in the second set is computed by adding to the reduced beam exposure of that pixel the contributions of spillover exposure arising from exposure of nearby pixels in the second set. The resist material is then irradiated, pixel-by-pixel with a fixed electron beam radius, with the exposure at each pixel being equal to the cumulative exposure computed for that pixel.

REFERENCES:
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4264711 (1981-04-01), Greeneich
patent: 4463265 (1984-07-01), Owen et al.
patent: 4746587 (1988-05-01), Nicholas
patent: 4816361 (1989-03-01), Glendinning
patent: 5008553 (1991-04-01), Abe
patent: 5130213 (1992-07-01), Berger et al.
"Proximity effect correction for electron beam lithography by equalization of background dose", Owen and Rissman, pp. 3573-3581, Journal Appl. Phys. vol. 54, No. 6, 1983.

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