Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1998-04-14
2000-02-01
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438167, 438172, H01L 21338
Patent
active
060202262
ABSTRACT:
A method for fabricating an enhancement mode periodic table group III-IV metal semiconductor metal field-effect transistor is described. The disclosed fabrication arrangement uses single metallization for ohmic and Schottky barrier contacts, employs initially undoped semiconductor materials--materials selectively doped in a disclosed processing step, employs a non-alloyed ohmic contact semiconductor layer and includes an inorganic dielectric material layer providing non photosensitive masking at plural points in the fabrication sequence along with permanent surface passivation. The invention uses a combined optical and electron beam lithographic process, the latter in small dimension gate areas. These attributes are combined to provide a field-effect transistor capable of microwave frequency use, of reduced fabrication cost, low electrical energy operating requirements increased dimensional accuracy and state of the art electrical performance. Fabricated device characteristics are also disclosed.
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Bozada Christopher A.
Cerny Charles L. A.
DeSalvo Gregory C.
Dettmer Ross W.
Ebel John L.
Hollins Gerald B.
Kundert Thomas L.
Lindsay Jr. Walter L.
Niebling John F.
The United States of America as represented by the Secretary of
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