Single-electron tunnelling logic device

Details Single-electron tunnelling logic device Single-electron tunnelling logic device

1995-03-15

1997-07-08

Westin, Edward P.

Electronic digital logic circuitry

Miscellaneous

257 31, H01L 2906, H01L 3922

Patent

active

056465599

ABSTRACT:
A stable output can be obtained with respect to the input level fluctuations. Two impedance elements 1 and 2 each having a single-electron tunnel junction are connected in series. The tunnel resistances R.sub.1 and R.sub.2 and the junction capacitances C.sub.1 and C.sub.2 of the respective impedance elements 1 and 2 are determined as R.sub.1 >R.sub.2 and C.sub.1 .gtoreq.C.sub.2 or R.sub.1 <R.sub.2 and C.sub.1 .gtoreq.C.sub.2. By this, the charge stored on the island portion 4 can be quantized at a roughly integral value times the prime charge e according to the input voltage, the current-voltage characteristics represent Coulomb staircase, a square-shaped Coulomb oscillation characteristics can be obtained, and a constant output current value to an input voltage range with constant width can be obtained, so that it is possible to widen the voltage margin corresponding to the respective input logical level. A stable output can be obtained against the input voltage fluctuations.

REFERENCES:
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patent: 5420746 (1995-05-01), Smith
patent: 5422496 (1995-06-01), Kamohara et al.
Higurashi et al., "Coulomb Blockade and Current-Voltage Characteristics of Ultrasmall Double".
"Tunnel Junctions with External Circuits", Physical Review B Condensed Matter 51(4): 2387-2398, Jan. (1995).
Urbina et al., "Controlled Transfer of Single Charge Carriers", IEEE Transactions on Magnetics 27(2):2578-2580 Mar. (1991).
Likharev, K., "Correlated Discrete Transfer of Single Electrons in Ultrasmall Tunnel Junctions", IBM J. Res. Develop., 32(1): 144-158 Jan. (1988).
Grabert et al., "Single Electron Tunneling Rates in Multijunction Circuits", Z. Phys. B--Condensed Matter 84: 143-155, Feb. 25, (1991).

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