Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-11
2000-04-25
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438264, 438301, 438962, 257315, 257316, H01L 21336
Patent
active
060543493
ABSTRACT:
A single-electron device includes a substrate, an insulating film provided on the substrate, a plurality of nanometer-size conductive particles formed in the insulating film along an interface between the substrate and the insulating film, and an electrode provided on the insulating film, wherein the conductive particles have a generally identical size and arranged substantially in a plane at a depth closer to the substrate.
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Horiguchi Naoto
Nakajima Anri
Nakao Hiroshi
Fujitsu Limited
Hack Jonathan
Niebling John F.
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