Single crystalline silicon wafer, ingot, and producing...

Details Single crystalline silicon wafer, ingot, and producing... Single crystalline silicon wafer, ingot, and producing...

2005-02-22

2005-02-22

Deo, Duy-Vu N. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S073000, C117S074000

Reexamination Certificate

active

06858077

ABSTRACT:
The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

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Hourai et al., “Growth Parameters Determining the Type of Grown in Defects in CZ Silicon Crystals”, Materials Science Forum, vol. 196-201 (1995), pp 1713-1718.

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