Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1995-05-24
2000-07-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257415, 257417, 257622, 257628, 7351432, 7351421, 73718, 73DIG1, 438 50, 438 52, 216 8, 216 17, 216 39, 200329, H01L 2982
Patent
active
060842571
ABSTRACT:
In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.
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Klaasen Erno
Logan John
Maluf Nadim
McCulley Wendell
Noworolski Jan M.
Lucas Novasensor
Mintel William
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