Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-11-21
2006-11-21
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S415000, C257SE29324
Reexamination Certificate
active
07138694
ABSTRACT:
A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
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Authorized Officer Katrin SommermeyerInvitation to Pay Additional Fees/ Communication Relating to the Results of the Partial International Search, International Searching Authority, Mar. 30, 2005, 6 pages.
Brosnihan Timothy J.
Nunan Thomas Kieran
Analog Devices Inc.
Bromberg & Sunstein LLP
Smith Bradley K.
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