Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2011-03-01
2011-03-01
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S479000, C438S483000, C438S493000, C438S503000, C438S602000, C257SE21090, C257SE21053, C257SE21097, C257SE21131, C257SE29089
Reexamination Certificate
active
07897490
ABSTRACT:
In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.
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Hanser Andrew D.
Liu Lianghong
Preble Edward A.
Williams N. Mark
Xu Xueping
Bingham & McCutchen LLP
Kyma Technologies, Inc.
Lebentritt Michael S
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