Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-09-26
2006-09-26
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S103000, C257S074000, C257S075000
Reexamination Certificate
active
07112826
ABSTRACT:
Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.
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patent: 6555846 (2003-04-01), Watanabe et al.
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Hirota Ryu
Motoki Kensaku
Nakahata Seiji
Okahisa Takuji
Uematsu Koji
McDermott Will & Emery LLP
Nelms David
Nguyen Thinh T
Sumitomo Electric Industries Ltd.
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