Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1995-06-06
1996-12-31
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 427255, 4272551, 4272557, 4272481, 437101, 437909, C23C 1600, B05D 306
Patent
active
055892337
ABSTRACT:
A method of depositing layers of intrinsic amorphous silicon and doped amorphous silicon sequentially on a substrate in the same CVD chamber without incurring a dopant contamination problem. The method can be carried out by first depositing an additional layer of a dielectric insulating material prior to the deposition process of the intrinsic amorphous silicon layer. The additional layer of insulating material deposited on the substrate should have a thickness such that residual insulating material coated on the chamber walls is sufficient to cover the residual dopants on the chamber walls left by the deposition process of the previous substrate. This provides a clean environment for the next deposition process of an intrinsic amorphous silicon layer on a substrate in the same CVD chamber.
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R. L. Bratter and J. E. Hitchner, "Dielectric Structure as an Out-Diffusion Barrier," IBM Technical Disclosure Bulletin, vol. No. 6, p. 1422, Nov. 1970.
Feng Guofu J.
Law Kam
Robertson Robert
Applied Materials Inc.
King Roy V.
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