Single and multilevel rework

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S723000

Reexamination Certificate

active

06982227

ABSTRACT:
A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.

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IEEE 2000 International; Tungsten Via Poisoning Caused by Water Trapped in Embedded Organic Low-K Dielectrics; Ikeda et al; 2000IEEE; pp 158-160.

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