Simultaneous glass deposition and viscoelastic flow process

Details Simultaneous glass deposition and viscoelastic flow process Simultaneous glass deposition and viscoelastic flow process

1991-03-05

1992-04-14

Fisher, Richard V.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 437236, 437238, 437982, 148DIG133, 427255, 4272553, C23C 1640

Patent

active

051044820

ABSTRACT:
A glass deposition viscoelastic flow process for forming planar and semi-planar insulator structures on semiconductor devices, which comprises feeding vaporized reactants into a reaction chamber at a reaction temperature between 750.degree.-950.degree. C. and subjecting the surface of the semiconductor devices to a high reactant velocity. The high reactant velocity allows the formation of a high quality, uniform glass layer at temperatures compatible with the fusion temperature, so that deposition occurs simultaneously with the viscoelastic flow of the glass. The simultaneous deposition and flow provides for topographical planarization substantially free of voids and other layer inconsistencies.

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