Simplified process for fabricating flash eeprom cells

Details Simplified process for fabricating flash eeprom cells Simplified process for fabricating flash eeprom cells

1996-01-04

1998-07-07

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438529, H01L 218247

Patent

active

057768110

ABSTRACT:
A simplified fabrication procedure for making flash EEPROM memory cells is disclosed. The method comprises performing a double-diffuse (deep) junction implant after the shallow source/drain of the memory cell have been implanted and formed. A high energy double-diffuse implant is used to replace separate, individual implant and diffusion steps which results in a memory cell having, less damage to its substrate.

REFERENCES:
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4957877 (1990-09-01), Tam et al.
patent: 5103274 (1992-04-01), Tang et al.
patent: 5120671 (1992-06-01), Tang et al.

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