Simplified masking process for programmable logic device manufac

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438257, 438217, 438263, H01L 218234

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active

058307958

ABSTRACT:
A process for forming CMOS transistors on a semiconductor substrate, wherein the plurality of transistors includes high-voltage N-channel and high-voltage P-channel transistors, and low-voltage N-channel and low-voltage P-channel transistors, wherein a tunnel oxide of a first thickness is required and a gate oxide of a second thickness is required is provided. The process comprises the steps of: forming a thick gate oxide on the surface of the substrate; forming a low voltage n-channel transistor mask, the mask including a plurality of windows exposing first portions of the thick gate oxide; implanting an n-type dopant into the substrate through said windows and through the thick gate oxide layer to form an n-dopant implant region; etching a first portion of the thick gate oxide exposing the surface of the substrate overlying the n-dopant implant region; stripping the low voltage n-channel mask; forming a low voltage p-channel transistor mask, the mask including a plurality of windows exposing the second portions of the thick gate oxide; implanting a p-type dopant into the substrate through said windows and through the thick gate oxide layer; etching a second portion of the thick gate oxide layer thereby exposing a first and second portions of the substrate surface; and simultaneously forming a tunnel oxide on the first exposed portion of the substrate and gate oxide on the second exposed portion of the substrate.

REFERENCES:
patent: 5010028 (1991-04-01), Gill et al.
patent: 5254487 (1993-10-01), Tamagawa
patent: 5432114 (1995-07-01), O
"Inside AMD's CMOS PLD Technology," PLD Databook, AMD, 1993.

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