Simple bicmos process for creation of low trigger voltage SCR an

Details Simple bicmos process for creation of low trigger voltage SCR an Simple bicmos process for creation of low trigger voltage SCR an

1998-05-19

2000-10-10

Bowers, Charles

Semiconductor device manufacturing: process

Making regenerative-type switching device

H01L 2133

Patent

active

061301175

ABSTRACT:
The present invention provides a semiconductor protection device in a substrate having a first type of conductivity. The semiconductor protection device includes two vertical bipolar transistors. A well region is located within the substrate having a second type of conductivity with a base region within the well region having a first type of conductivity. A first doped region having the second type of conductivity and a second doped region having a first type of conductivity are located within the well region. A third doped region having the second type of conductivity and a fourth doped region having the first type of conductivity are located within the base region. A doped region having a first type of conductivity is located within the substrate. This doped region is connected to the fourth doped region.

REFERENCES:
patent: 5077591 (1991-12-01), Chen et al.
patent: 5225702 (1993-07-01), Chatterjee
patent: 5274262 (1993-12-01), Avery
patent: 5343053 (1994-08-01), Avery
patent: 5453384 (1995-09-01), Chatterjee
patent: 5455436 (1995-10-01), Cheng
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5473169 (1995-12-01), Ker et al.
patent: 5485024 (1996-01-01), Reay
patent: 5493133 (1996-02-01), Duvvury et al.
patent: 5500546 (1996-03-01), Marum et al.
patent: 5506742 (1996-04-01), Marum
patent: 5661687 (1997-08-01), Randazzo
patent: 5808342 (1998-09-01), Chen et al.
patent: 5821572 (1998-12-01), Walker et al.
patent: 5856214 (1999-01-01), Yu
Bipolar SCR ESD Protection Circuit for High Speed Submicron Bipolar/BiCMOS Circuits; 1995 IEEE; Julian Z. Chen et al.; pp. 14.1.1-14.1.4.

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