SIMOX using controlled water vapor for oxygen implants

Details SIMOX using controlled water vapor for oxygen implants SIMOX using controlled water vapor for oxygen implants

2006-01-24

2006-01-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

C438S404000, C438S407000

Reexamination Certificate

active

06989315

ABSTRACT:
An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

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