Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-20
2006-06-20
Nguyen, Ha (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S686000, C438S687000, C205S185000, C205S263000
Reexamination Certificate
active
07064065
ABSTRACT:
In one embodiment, a method for depositing a capping layer on a substrate surface containing a copper layer is provided which includes exposing the substrate surface to a zinc solution, exposing the substrate surface to a silver solution to form a silver layer thereon and depositing the capping layer on the silver layer by an electroless deposition process. A second silver layer may be formed on the capping layer, if desired. In another embodiment, a composition of a deposition solution useful for forming a cobalt tungsten alloy contains calcium tungstate, a cobalt source at a concentration within a range from about 50 mM to about 500 mM, a complexing agent at a concentration within a range from about 100 mM to about 700 mM, and a buffering agent at a concentration within a range from about 50 mM to about 500 mM.
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Lopatin Sergey D.
Shacham-Diamand Yosef
Shanmugasundrum Arulkumar
Applied Materials Inc.
Lee Cheung
Nguyen Ha
Patterson & Sheridan LLP
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