Siloxane-based resin and a semiconductor interlayer...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S781000, C428S447000, C257S642000, C257SE51046

Reexamination Certificate

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11431707

ABSTRACT:
A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

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patent: 0 997 497 (2000-03-01), None

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