Siloxane-based resin and a semiconductor interlayer...

Details Siloxane-based resin and a semiconductor interlayer... Siloxane-based resin and a semiconductor interlayer...

2007-11-13

2007-11-13

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C428S447000, C257S642000, C257SE51046

Reexamination Certificate

active

11431707

ABSTRACT:
A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

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