Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2005-12-13
2005-12-13
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S113000, C438S458000, C438S460000, C438S462000, C438S463000, C438S465000, C257S620000
Reexamination Certificate
active
06974726
ABSTRACT:
A silicon wafer has a plurality of integrated circuits terminated on a surface of the silicon wafer. The silicon wafer has a soluble protective coat on the surface of the silicon wafer. The coated silicon wafer may be processed by laser scribing. A solvent wash may be used to remove the soluble protective coat and debris from laser scribing. The coated silicon wafer may be saw cut after laser scribing. A flow of solvent may be provided during the saw cutting. The flow of solvent may be sufficient to remove at least a substantial portion of the soluble protective coat.
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H.S. Lehman et al., “Insulating Lateral Surfaces on Semiconductor Chips,” IBM Technical Disclosure Bulletin, vol. 7, No. 12, May 1965, 2 pages.
Canham Beverly J.
Dani Ashay A.
Matayabas, Jr. Chris
Oskarsdottir Gudbjorg H.
Rumer Chris L.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Kang Donghee
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