Silicon wafer laser processing method and laser beam...

Details Silicon wafer laser processing method and laser beam... Silicon wafer laser processing method and laser beam...

2005-10-04

2009-06-30

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S462000, C257SE21483, C257SE21475

Reexamination Certificate

active

07553777

ABSTRACT:
A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.

REFERENCES:
patent: 2003/0209528 (2003-11-01), Choo et al.
patent: 2006/0021978 (2006-02-01), Alexeev et al.
patent: 2006/0160331 (2006-07-01), Fukuyo et al.
patent: 2002192370 (2002-10-01), None
patent: 3408805 (2003-03-01), None

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