Silicon wafer for IGBT and method for producing same

Details Silicon wafer for IGBT and method for producing same Silicon wafer for IGBT and method for producing same

2008-03-18

2008-03-18

Hiteshew, Felisa (Department: 1792)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S013000, C117S019000, C117S020000

Reexamination Certificate

active

11449498

ABSTRACT:
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017atoms/cm3by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

REFERENCES:
patent: 1513193 (2005-03-01), None
patent: 2002128591 (2002-05-01), None
patent: WO2004/073057 (2004-08-01), None
patent: 2006344823 (2006-12-01), None
Takasu, S. et al. Neutron Transmuted Magnetic Czocharski Grown Silicon Wafer For Power Device, PESC '88 Record, 19th Annual IEEE Power Electronics Specialists Conference (Cat. No. 88CH2523-9), IEEE New York, New York, USA, Apr. 1988, pp. 1339-1345.

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