Silicon single crystal wafer

Details Silicon single crystal wafer Silicon single crystal wafer

2006-07-11

2006-07-11

Hiteshew, Felisa (Department: 1765)

Stock material or miscellaneous articles

Composite

Of silicon containing

C117S013000, C117S020000

Reissue Patent

active

RE039173

ABSTRACT:
A method of making silicon single crystal wafers free of grown-in defects is provided. These wafers are formed from silicon single crystal manufactured by the Czochralski method. Careful control of the pulling rate, V (mm/min), and the temperature gradient G (° C./mm) permits crystals to be formed that are free from OSF rings, and other types of defects.

REFERENCES:
patent: 5138179 (1992-08-01), Baba et al.
patent: 6113687 (2000-09-01), Horai et al.
patent: 6327219 (2001-12-01), Zhang et al.
patent: 8-268794 (1996-10-01), None
Proceedings of the 18thInternational Conference on Defects in Semiconductors, Part 4, Sendai, Japan, Jul. 23-28, 1995, Trans Tech Publications.
Electrochemical Society, Reno, Nevada, May 21-26 Spring Meeting (1995), 4pp.
Journal of Crystal Growth, vol. 59 (1982), pp. 1-12. Takao ABE, Behavior of Point Defect FZ and CZ Silicon Crystals, pp. 272-288, “Point and Secondary Defects of CZ Crystals”, Mar. 1990 (with partial English Translation).
T. Nagashima et al., Extended Abstract (The 54thAutumn Meeting, 199), The Japan Society fo Applied Physics, AN 29a-HA-7 pp. 303, “Observation of Grown-in-Defects in CZ-Si Crystals”, Sep. 27, 1993 (with partial English translation).

Affiliated with

Also associated with

Rating

Silicon single crystal wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon single crystal wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon single crystal wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3603160