Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-29
2008-07-29
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S379000, C257S384000, C257S903000, C257SE23160
Reexamination Certificate
active
07405447
ABSTRACT:
Semiconductor devices and memory cells are formed using silicon rich barrier layers to prevent diffusion of dopants from differently doped polysilicon films to overlying conductive layers or to substrates. A polycilicide gate electrode structure may be formed using the silicon rich barrier layers. Methods of forming the semiconductor devices and memory cells are also provided.
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Braun Chris
Good Farrell M.
Tang Sanh Dang
Dinsmore & Shohl LLP
Micro)n Technology, Inc.
Zarneke David A
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