Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-06-13
2008-10-21
Sefer, Ahmed (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S321000, C257S322000, C257SE21415, C257SE21421, C257SE21442, C257SE21703
Reexamination Certificate
active
07439574
ABSTRACT:
Provided are a silicon/oxide
itride/oxide/silicon (SONOS) memory, a fabricating method thereof, and a memory programming method. The SONOS memory includes a substrate; a first insulating layer stacked on the substrate; a semiconductor layer, which is patterned on the first insulating layer in a predetermined shape, including source and drain electrodes separated by a predetermined interval; a second insulating layer located on the semiconductor layer between the source and drain electrodes; a memory layer, which is deposited on sides of a portion of the semiconductor layer between the source and drain electrodes and on sides and an upper surface of the second insulating layer, including electron transferring channels and an electron storing layer; and a gate electrode, which is deposited on a surface of the memory layer, for controlling transfer of electrons in the memory layer. The programming method may provide a large capacity, stable, multi-level memory.
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Kim Chung-woo
Lee Jong-duk
Lee Yong-kyu
Park Byung-gook
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Sefer Ahmed
Seoul National University
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