Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C438S201000, C438S211000, C438S257000
Reexamination Certificate
active
10961481
ABSTRACT:
In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device, and methods of manufacturing and operating the same, the SONOS memory device includes a semiconductor layer including source and drain regions and a channel region, an upper stack structure formed on the semiconductor layer, the upper stack structure and the semiconductor layer forming an upper SONOS memory device, and a lower stack structure formed under the semiconductor layer, the lower stack structure and the semiconductor layer forming a lower SONOS memory device.
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Chae Hee-soon
Kim Chung-woo
Kim Moon-kyung
Lee Eun-hong
Lee Jo-won
Lee Eugene
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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