Silicon oxide gap-filling process

Details Silicon oxide gap-filling process Silicon oxide gap-filling process

2006-01-24

2006-01-24

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S424000, C438S787000

Reexamination Certificate

active

06989337

ABSTRACT:
A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

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