Silicon-on-insulator wafer and method of manufacturing the same

Details Silicon-on-insulator wafer and method of manufacturing the same Silicon-on-insulator wafer and method of manufacturing the same

2005-04-26

2005-04-26

Mai, Anh Duy (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S459000, C438S519000

Reexamination Certificate

active

06884693

ABSTRACT:
In a silicon-on-insulator (SOI) wafer and a method of manufacturing the same, the SOI wafer includes a first semiconductor wafer including an isolation insulating film formed to define an active region; a well region and a buried layer formed in the active region of the first semiconductor wafer; and a second semiconductor wafer bonded with the first semiconductor wafer, wherein an SOI insulating film, which contacts a lower portion of the isolation insulating film and electrically insulates a lower portion of the active region, is formed.

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