Silicon-on-insulator substrates using low dose implantation

Details Silicon-on-insulator substrates using low dose implantation Silicon-on-insulator substrates using low dose implantation

1997-10-30

2000-03-28

Mulpuri, Savitri

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438480, 438528, H01L 21265

Patent

active

060431660

ABSTRACT:
An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250.degree. C. and above 1300.degree. C., respectively, at two respective oxygen concentrations. The invention overcomes the problem of high SOI substrate fabrication cost due to ion implant time and of getting high quality buried oxide (BOX) layers below a thin layer of single crystal silicon.

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