Silicon-on-insulator substrate, fabricating method thereof,...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S618000, C257SE21094, C438S149000, C438S479000

Reexamination Certificate

active

11242824

ABSTRACT:
A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.

REFERENCES:
patent: 5298449 (1994-03-01), Kikuchi
patent: 5493470 (1996-02-01), Zavracky et al.
patent: 6287885 (2001-09-01), Muto et al.
patent: 6657258 (2003-12-01), Bae
patent: 6755982 (2004-06-01), Lin
patent: 6916728 (2005-07-01), Gogoi et al.
patent: 6979873 (2005-12-01), Fujii
patent: 2004/0121564 (2004-06-01), Gogoi
patent: 0 325 885 (1989-08-01), None
patent: 05-234884 (1993-09-01), None
patent: 5-234884 (1993-09-01), None
Howe R T: “Siliconmicrodynamic Systems-Recent Developments in Microactuatiorsand Micromachinery”, Wescon Technical Papers, Wester Periodicals Co. North Hollywood, US, vol. 33, Nov. 1, 1989, pp. 202-205, XP000116005.

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