Silicon-on-insulator substrate and a method for fabricating the

Details Silicon-on-insulator substrate and a method for fabricating the Silicon-on-insulator substrate and a method for fabricating the

1996-10-15

1998-06-23

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438455, 438459, 438476, H01L 2176

Patent

active

057705119

ABSTRACT:
The present invention, a silicon-on-insulator (SOI) substrate and its fabrication method, is suited to the wafer-bonding method. A pre-oxidation treatment accompanying the oxidation treatment and the adhesive thermal treatment to prevent metal impurities from polluting semiconductor wafers. Before an oxide layer is thermally grown on one wafer or after two bonded wafers are subjected to a adhesive thermal treatment at a temperature T1, the pre-oxidation treatment is performed at a temperature of T2, which satisfies the relation equation of T1-300.ltoreq.T2.ltoreq.T1-100 (.degree.C.). Water steam, pure oxygen, or diluted oxygen, is conducted into the furnace, in which the pre-oxidation treatment is performed in an oxidation ambient. Accordingly, an oxide film having a predetermined thickness is formed on the surface of the SOI substrate serving as a barrier for preventing metal impurities, such as Fe, Cr, or the like, from invading the substrate and degrading the electrical characteristics thereof.

REFERENCES:
patent: 5194395 (1993-03-01), Wada
patent: 5238875 (1993-08-01), Ogino
patent: 5443661 (1995-08-01), Oguro et al.
patent: 5478408 (1995-12-01), Mitani et al.

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