Silicon-on-insulator (SOI) semiconductor device and method of ma

Details Silicon-on-insulator (SOI) semiconductor device and method of ma Silicon-on-insulator (SOI) semiconductor device and method of ma

1997-05-21

1998-08-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, H01L 2701

Patent

active

057897816

ABSTRACT:
An improved Silicon-On-Insulator (SOI) semiconductor device having a first and second asymmetric transistor, each having a source, a body, a gate, and a drain. The respective gates and drains of the asymmetric transistors are connected together such that a transistor pair is formed which is operable as a single symmetric transistor. An NMOS transistor pair may be connected in parallel with a PMOS transistor pair so as to form a symmetric Pass Gate.

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patent: 5151759 (1992-09-01), Vinal
patent: 5334861 (1994-08-01), Pfiester et al.
patent: 5461251 (1995-10-01), Yang et al.

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