Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-03
1998-08-04
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257487, H01L 2701, H01L 2358
Patent
active
057897824
ABSTRACT:
A lateral semiconductor device with enhanced breakdown characteristics includes a semiconductor substrate composite of first and second semiconductor substrates bonded to one another via an oxide film. An insulation film is buried in a separation trench which extends from a major surface of the first semiconductor substrate to the oxide film. An element region of greater than 10 .mu.m in thickness is isolated by the separation trench from other element regions. First and second diffusion regions of opposite conductivity type are formed on the element region. The potential of the second substrate is fixed at one-third of the designed maximum breakdown voltage of the lateral semiconductor device. Alternatively, if the element region is 10 .mu.m or less in thickness, the potential of the second substrate is fixed at one-half of the designed maximum breakdown voltage of the lateral semiconductor device.
REFERENCES:
patent: 5554872 (1996-09-01), Baba et al.
Fuji Electric & Co., Ltd.
Loke Steven H.
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