Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Patent
1997-12-09
2000-05-02
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
438370, 438221, 438424, H01L 2136
Patent
active
060572140
ABSTRACT:
A silicon-on-insulator trench isolation structure is disclosed that includes an active silicon-on-insulator region, an active bulk substrate region, and a trench region positioned between the active silicon-on-insulator region and the active bulk substrate region. The active silicon-on-insulator region is provided with a silicon-on-insulator film (42) positioned above a buried insulator layer (32). The active bulk substrate region may be provided between two trench regions such as a trench region (20) and a trench region (22). The trench region (20) is positioned between the active silicon-on-insulator region and the active bulk substrate region.
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Blum David S
Bowers Charles
Brady III Wade James
Garner Jacqueline J.
Telecky Jr. Frederick J.
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