Silicon nano wires, semiconductor device including the same,...

Details Silicon nano wires, semiconductor device including the same,... Silicon nano wires, semiconductor device including the same,...

2006-02-27

2009-12-01

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S542000, C257SE21352, C257SE21466

Reexamination Certificate

active

07625812

ABSTRACT:
A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

REFERENCES:
patent: 2004/0005723 (2004-01-01), Empedocles et al.
patent: 2005/0006673 (2005-01-01), Samuelson et al.
patent: 2005/0253138 (2005-11-01), Choi et al.
patent: 1453884 (2003-11-01), None
patent: 10-2004-0000418 (2004-01-01), None
J.G. Patridge et al. “Templated cluster assembly for prodution of metallic nanowires in passivated silicon V-grooves”, Microelectric Engineering 73-74 (2004), pp. 583-587.
CN OA Sep. 5, 2008 All references cited in the Foreign Office Action and not previously submitted are listed above.

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