Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2004-03-10
2010-06-15
Gurley, Lynne A (Department: 2811)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21092
Reexamination Certificate
active
07737051
ABSTRACT:
A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.
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Dip Anthony
Joe Raymond
Kaushal Sanjeev
Leith Allen J.
Oh Seungho
Gurley Lynne A
Matthews Colleen A
Tokyo Electron Limited
Wood Herron & Evans LLP
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