Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-15
2008-10-28
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE31035, C257SE33009, C257SE31043
Reexamination Certificate
active
07442599
ABSTRACT:
A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.
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Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-Shen
Tang Jinke
Tweet Douglas J.
Law Office of Gerald Maliszewski
Maliszewski Gerald
Richards N Drew
Sharp Laboratories of America Inc.
Singal Ankush k
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