Silicon electrode plate for plasma etching with superior...

Details Silicon electrode plate for plasma etching with superior... Silicon electrode plate for plasma etching with superior...

2005-03-30

2010-10-26

Hassanzadeh, Parviz (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345470

Reexamination Certificate

active

07820007

ABSTRACT:
This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

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International Search Report for PCT/JP2005/006134 completed May 19, 2005.
Japanese Office Action mailed Jul. 30, 2009 for the corresponding Japanese Patent Application No. 2004-234961.

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