Silicon dioxide removing method

Details Silicon dioxide removing method Silicon dioxide removing method

2005-11-22

2005-11-22

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S706000, C438S715000, C438S723000, C438S743000, C438S744000

Reexamination Certificate

active

06967167

ABSTRACT:
A method for removing silicon dioxide residuals is disclosed. The method includes reacting a portion of a silicon dioxide layer (i.e., oxide) to form a reaction product layer, removing the reaction product layer and annealing in an environment to remove oxide residuals. The method finds application in a variety of semiconductor fabrication processes including, for example, fabrication of a vertical HBT or silicon-to-silicon interface without an oxide interface.

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