Silicon-controlled rectifier structures on silicon-on...

Details Silicon-controlled rectifier structures on silicon-on... Silicon-controlled rectifier structures on silicon-on...

2006-01-17

2006-01-17

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S338000, C257S357000, C257S347000, C257S350000, C257S355000, C257S368000, C257S369000, C257S107000

Reexamination Certificate

active

06987303

ABSTRACT:
A method to form a SCR device in the manufacture of an integrated circuit device is achieved. The method comprises providing a SOI substrate comprising a silicon layer overlying a buried oxide layer. The silicon layer further comprises a first well of a first type and a second well of a second type. A first heavily doped region of the first type is formed in the second well to form an anode terminal. A second heavily doped region of the second type is formed in the first well to form a cathode terminal and to complete the SCR device. A gate isolation method is described. A salicide method is described. LVT-SCR methods, including a floating-well, LVT-SCR method, are described.

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