Silicon-containing resist to pattern organic low k-dielectrics

Details Silicon-containing resist to pattern organic low k-dielectrics Silicon-containing resist to pattern organic low k-dielectrics

2007-12-18

2007-12-18

Everhart, Caridad M. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S778000, C257SE21035, C257SE21037

Reexamination Certificate

active

11097029

ABSTRACT:
The disclosure provides methods to mitigate and/or eliminate problems associated with removal of carbon-based resists from organic low k dielectrics. The methods include forming an organic low k dielectric layer over a semiconductor substrate, forming a capping layer over the organic low k dielectric layer, forming a silicon-containing resist over the capping layer, patterning the silicon-containing resist layer to expose portions of the capping layer and to form a patterned silicon oxide layer, removing the organic low k dielectric layer to form one or more openings, and removing the patterned silicon oxide layer. The silicon-containing resist facilitates efficient patterning of the organic low k-dielectric layers, and thereby increases the performance and cost-effectiveness of semiconductor devices fabricated using organic low k dielectrics.

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