Silicon carbide semiconductor device and method for...

Details Silicon carbide semiconductor device and method for... Silicon carbide semiconductor device and method for...

2008-08-01

2010-11-09

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S931000

Reexamination Certificate

active

07829416

ABSTRACT:
A gate electrode18formed on a silicon carbide substrate11includes a silicon lower layer18A and a silicide upper layer18B provided on the silicon lower layer18A, the silicide upper layer18B being made of a compound of a first metal and silicon. A source electrode1asformed on the surface of the silicon carbide substrate11and in contact with an n type source region and a p+region contains second metal silicide different from the first metal silicide. Side faces of the silicon lower layer18A are covered with an insulator.

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International Search Report for corresponding Application No. PCT/JP2008/002073 mailed Oct. 28, 2008.
Form PCT/ISA/237 and a partial English translation.

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