Silicon carbide semiconductor device and method for...

Details Silicon carbide semiconductor device and method for... Silicon carbide semiconductor device and method for...

2008-07-15

2008-07-15

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C257SE21054, C257SE21115

Reexamination Certificate

active

11268612

ABSTRACT:
A method for manufacturing a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate and first to third semiconductor layers; forming a trench in a cell region of the semiconductor substrate; forming a fourth semiconductor layer in the trench; forming an oxide film in the trench such that a part of the fourth semiconductor layer on a sidewall of the trench is thermally oxidized; forming a gate electrode on the oxide film in the trench; forming a first electrode electrically connecting to the third semiconductor layer; and forming a first electrode electrically connecting to the silicon carbide substrate.

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