Silicon carbide membrane for X-ray lithography and method for th

Details Silicon carbide membrane for X-ray lithography and method for th Silicon carbide membrane for X-ray lithography and method for th

1990-12-21

1992-02-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156657, 156662, 2041921, 378 35, B44C 122, H01L 21306, C03C 1500, C03C 2506

Patent

active

050890859

ABSTRACT:
The inventive method provides a silicon carbide membrane for X-ray lithography having high performance in respect of stability against high energy beam irradiation. The method comprises depositing a silicon carbide film by sputtering on a silicon wafer as the substrate under such conditions that the thus deposited film is under a tensile stress in a specified range by keeping the substrate at a temperature higher than 500.degree. C. The thus deposited silicon carbide film is at least partly crystalline and the crystallinity thereof can be defined by the sharpness of a peak in the X-ray diffraction diagram of the membrane which can be assigned to the (1 1 1) plane of the crystalline silicon carbide.

REFERENCES:
patent: 4994141 (1991-02-01), Harms et al.

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