Silicon carbide deposited by high density plasma...

Details Silicon carbide deposited by high density plasma... Silicon carbide deposited by high density plasma...

2005-08-09

2005-08-09

Meeks, Timothy (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

C118S715000, C118S728000, C427S577000, C427S578000, C438S778000

Reexamination Certificate

active

06926926

ABSTRACT:
A SiC-based layer is deposited on a substrate having an electrical resistivity between about 1 and 100 Ω cm. The substrate is disposed in a process chamber. A gaseous mixture having a silicon-containing gas and a hydrocarbon-containing gas is flowed to the process chamber. A high-density plasma, having an ion density greater than about 1011ions/cm3is generated from the plasma. A small electrical bias, between about 0.65 and 1.30 W/cm2, is applied to the substrate. The low bias compensates for an unexpected cooling that results when depositing the SiC-based layer but is low enough that implantation of hydrogen is minimized.

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