Silicon and polycide plasma etch appplications by use of silicon

Details Silicon and polycide plasma etch appplications by use of silicon Silicon and polycide plasma etch appplications by use of silicon

1997-06-27

1999-01-26

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438696, 438719, 438721, H01L 21311

Patent

active

058638393

ABSTRACT:
During the etching of a silicon-containing material using a halogen-containing etch gas, a silicon-hydride gas is added to the etch gas to provide increased sidewall protection during the etch. Suitably up to about 50 percent by volume of a silicon-containing gas such as silane is added to improve anisotropy of the etch and to prevent notching at the silicon-substrate interface.

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